Produkte > IXYS > IXTT6N120
IXTT6N120

IXTT6N120 IXYS

Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_6N120_Datasheet.PDF
Hersteller: IXYS
MOSFETs 6 Amps 1200V 2.700 Rds
auf Bestellung 274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXTT6N120 IXYS

Description: MOSFET N-CH 1200V 6A TO268, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.

Weitere Produktangebote IXTT6N120 nach Preis ab 11.5 EUR bis 13.73 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTT6N120 IXTT6N120 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_6n120_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 6A TO268
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.73 EUR
30+11.5 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH