auf Bestellung 344 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.59 EUR |
| 10+ | 2.53 EUR |
| 70+ | 2.09 EUR |
| 280+ | 1.92 EUR |
| 560+ | 1.74 EUR |
| 5040+ | 1.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTU02N50D IXYS
Description: MOSFET N-CH 500V 200MA TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V, Power Dissipation (Max): 1.1W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 5V @ 25µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V.
Weitere Produktangebote IXTU02N50D nach Preis ab 1.91 EUR bis 4.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXTU02N50D | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 200MA TO251Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 25µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V |
auf Bestellung 356 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IXTU02N50D | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 500V 0.2A 3-Pin(3+Tab) TO-251AA |
Produkt ist nicht verfügbar |