| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.27 EUR |
| 10+ | 3.01 EUR |
| 70+ | 2.49 EUR |
| 280+ | 2.28 EUR |
| 560+ | 2.07 EUR |
| 5040+ | 1.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTU02N50D IXYS
Description: MOSFET N-CH 500V 200MA TO251, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251AA, Vgs(th) (Max) @ Id: 5V @ 25µA, Power Dissipation (Max): 1.1W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), FET Type: N-Channel, Depletion Mode.
Weitere Produktangebote IXTU02N50D nach Preis ab 2.27 EUR bis 5.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXTU02N50D | IXYS |
 Description: MOSFET N-CH 500V 200MA TO251Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 5V @ 25µA Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) FET Type: N-Channel, Depletion Mode |
auf Bestellung 356 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXTU02N50D |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 200MA TO251
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 25µA
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel, Depletion Mode
Description: MOSFET N-CH 500V 200MA TO251
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 25µA
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel, Depletion Mode
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.4 EUR |
| 70+ | 2.52 EUR |
| 140+ | 2.27 EUR |