IXTY12N06T IXYS
Hersteller: IXYS
Description: MOSFET N-CH 60V 12A TO252
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 25µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTY12N06T IXYS
Description: MOSFET N-CH 60V 12A TO252, Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 25µA, Power Dissipation (Max): 33W (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Weitere Produktangebote IXTY12N06T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTY12N06T | Hersteller : IXYS | MOSFETs 12 Amps 6V |
Produkt ist nicht verfügbar |