IXTY44N10T-TRL Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 44A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 22A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 25 V
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Technische Details IXTY44N10T-TRL Littelfuse Inc.
Description: MOSFET N-CH 100V 44A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 22A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 25 V.
Weitere Produktangebote IXTY44N10T-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTY44N10T-TRL | IXYS |
 MOSFET Modules IXTY44N10T TRL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXTY44N10T-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; 100V; 44A; 130W; DPAK,TO252AA; 60ns Case: DPAK; TO252AA Mounting: SMD Power dissipation: 130W Gate charge: 33nC Technology: Trench Drain current: 44A Kind of channel: enhancement Drain-source voltage: 100V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 30V On-state resistance: 30mΩ Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTY44N10T-TRL |
|
Hersteller: IXYS
MOSFET Modules IXTY44N10T TRL
MOSFET Modules IXTY44N10T TRL
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTY44N10T-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 44A; 130W; DPAK,TO252AA; 60ns
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 130W
Gate charge: 33nC
Technology: Trench
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 30mΩ
Reverse recovery time: 60ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 44A; 130W; DPAK,TO252AA; 60ns
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 130W
Gate charge: 33nC
Technology: Trench
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 30mΩ
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH