IXYA8N90C3D1 IXYS
Hersteller: IXYS
Description: IGBT 900V 20A 125W C3 TO-263AA
Power - Max: 125 W
Current - Collector Pulsed (Icm): 48 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 13.3 nC
Test Condition: 450V, 8A, 30Ohm, 15V
Switching Energy: 460µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 16ns/40ns
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Reverse Recovery Time (trr): 114 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Technische Details IXYA8N90C3D1 IXYS
Description: IGBT 900V 20A 125W C3 TO-263AA, Power - Max: 125 W, Current - Collector Pulsed (Icm): 48 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector (Ic) (Max): 20 A, Gate Charge: 13.3 nC, Test Condition: 450V, 8A, 30Ohm, 15V, Switching Energy: 460µJ (on), 180µJ (off), Td (on/off) @ 25°C: 16ns/40ns, Supplier Device Package: TO-263AA, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A, Reverse Recovery Time (trr): 114 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
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IXYA8N90C3D1 | IXYS |
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IXYA8N90C3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263 Type of transistor: IGBT Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 13.3nC Kind of package: tube Collector-emitter voltage: 900V Technology: GenX3™; Planar; XPT™ Turn-on time: 39ns Turn-off time: 238ns Collector current: 8A Gate-emitter voltage: ±20V Pulsed collector current: 48A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYA8N90C3D1 |
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Hersteller: IXYS
IGBTs 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode
IGBTs 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYA8N90C3D1 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH