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IXYH12N250CV1HV

IXYH12N250CV1HV IXYS


DS100792(IXYH12N250CV1HV)_.pdf Hersteller: IXYS
Description: IGBT 2500V 28A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
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Anzahl Preis ohne MwSt
1+41.29 EUR
10+ 36.69 EUR
100+ 32.09 EUR
500+ 27.39 EUR
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Technische Details IXYH12N250CV1HV IXYS

Description: IGBT 2500V 28A TO247HV, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 16 ns, Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A, Supplier Device Package: TO-247 (IXYH), Td (on/off) @ 25°C: 12ns/167ns, Switching Energy: 3.56mJ (on), 1.7mJ (off), Test Condition: 1250V, 12A, 10Ohm, 15V, Gate Charge: 56 nC, Part Status: Active, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 310 W.

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IXYH12N250CV1HV IXYH12N250CV1HV Hersteller : IXYS IXYH12N250CV1HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 12A
Power dissipation: 310W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 333ns
Features of semiconductor devices: high voltage
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IXYH12N250CV1HV IXYH12N250CV1HV Hersteller : IXYS IXYH12N250CV1HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 12A
Power dissipation: 310W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 333ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar