IXYH75N120B4 IXYS
Hersteller: IXYS
Description: IGBT 1200V 240A TO-247AD
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 440 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 240 A
Part Status: Active
Gate Charge: 157 nC
Test Condition: 600V, 50A, 3Ohm, 15V
Switching Energy: 4.5mJ (on), 2.7mJ (off)
Td (on/off) @ 25°C: 22ns/182ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Reverse Recovery Time (trr): 66 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IXYH75N120B4 IXYS
Description: IGBT 1200V 240A TO-247AD, Power - Max: 1150 W, Current - Collector Pulsed (Icm): 440 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 240 A, Part Status: Active, Gate Charge: 157 nC, Test Condition: 600V, 50A, 3Ohm, 15V, Switching Energy: 4.5mJ (on), 2.7mJ (off), Td (on/off) @ 25°C: 22ns/182ns, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A, Reverse Recovery Time (trr): 66 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXYH75N120B4
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXYH75N120B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3 Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 1.15kW Case: TO247; TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 157nC Kind of package: tube Turn-on time: 24ns Turn-off time: 235ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYH75N120B4 |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH