IXYH8N250CV1HV IXYS
Hersteller: IXYS
Description: IGBT 2500V 29A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
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Technische Details IXYH8N250CV1HV IXYS
Description: IGBT 2500V 29A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 5 ns, Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A, Supplier Device Package: TO-247 (IXYH), Td (on/off) @ 25°C: 11ns/180ns, Switching Energy: 2.6mJ (on), 1.07mJ (off), Test Condition: 1250V, 8A, 15Ohm, 15V, Gate Charge: 45 nC, Part Status: Active, Current - Collector (Ic) (Max): 29 A, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector Pulsed (Icm): 70 A, Power - Max: 280 W.
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|---|---|---|---|---|---|
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IXYH8N250CV1HV | IXYS |
IGBT Transistors IGBT XPT-HI VOLTAGE |
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Im Einkaufswagen Stück im Wert von UAH |
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IXYH8N250CV1HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV Case: TO247HV Mounting: THT Power dissipation: 280W Gate charge: 45nC Technology: XPT™ Features of semiconductor devices: high voltage Pulsed collector current: 70A Type of transistor: IGBT Turn-on time: 24ns Kind of package: tube Turn-off time: 328ns Gate-emitter voltage: ±20V Collector current: 8A Collector-emitter voltage: 2.5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYH8N250CV1HV |
|
Hersteller: IXYS
IGBT Transistors IGBT XPT-HI VOLTAGE
IGBT Transistors IGBT XPT-HI VOLTAGE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYH8N250CV1HV |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH