| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.22 EUR |
| 10+ | 7.52 EUR |
| 100+ | 6.37 EUR |
| 500+ | 5.02 EUR |
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Technische Details IXYP35N65C5 IXYS
Description: IGBT TRENCH FS 650V 90A TO-220, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-220 (IXYP), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 21ns/122ns, Switching Energy: 230µJ (on), 180µJ (off), Test Condition: 300V, 20A, 5Ohm, 15V, Gate Charge: 96 nC, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 190 A, Power - Max: 326 W.
Weitere Produktangebote IXYP35N65C5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXYP35N65C5 | IXYS |
 Description: IGBT TRENCH FS 650V 90A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-220 (IXYP) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 21ns/122ns Switching Energy: 230µJ (on), 180µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 96 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 190 A Power - Max: 326 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYP35N65C5 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 326W; TO220-3 Type of transistor: IGBT Power dissipation: 326W Case: TO220-3 Mounting: THT Gate charge: 96nC Kind of package: tube Collector current: 35A Gate-emitter voltage: ±20V Pulsed collector current: 190A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXYP35N65C5 |
|
Hersteller: IXYS
Description: IGBT TRENCH FS 650V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/122ns
Switching Energy: 230µJ (on), 180µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 96 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 326 W
Description: IGBT TRENCH FS 650V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/122ns
Switching Energy: 230µJ (on), 180µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 96 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 326 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYP35N65C5 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 326W; TO220-3
Type of transistor: IGBT
Power dissipation: 326W
Case: TO220-3
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 326W; TO220-3
Type of transistor: IGBT
Power dissipation: 326W
Case: TO220-3
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH