IXYT20N120C3D1HV IXYS
Hersteller: IXYS
Description: IGBT 1200V 36A TO-268HV
Power - Max: 230 W
Current - Collector Pulsed (Icm): 88 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 36 A
Part Status: Active
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 20ns/90ns
Supplier Device Package: TO-268HV (IXYT)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Reverse Recovery Time (trr): 29 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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Technische Details IXYT20N120C3D1HV IXYS
Description: IGBT 1200V 36A TO-268HV, Power - Max: 230 W, Current - Collector Pulsed (Icm): 88 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 36 A, Part Status: Active, Gate Charge: 53 nC, Test Condition: 600V, 20A, 10Ohm, 15V, Switching Energy: 1.3mJ (on), 1mJ (off), Td (on/off) @ 25°C: 20ns/90ns, Supplier Device Package: TO-268HV (IXYT), Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Reverse Recovery Time (trr): 29 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote IXYT20N120C3D1HV
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|---|---|---|---|---|---|
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IXYT20N120C3D1HV | IXYS |
IGBTs TO268 1200V 17A DIODE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYT20N120C3D1HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 17A Power dissipation: 230W Case: TO268HV Gate-emitter voltage: ±20V Pulsed collector current: 88A Mounting: SMD Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYT20N120C3D1HV |
|
Hersteller: IXYS
IGBTs TO268 1200V 17A DIODE
IGBTs TO268 1200V 17A DIODE
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYT20N120C3D1HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH