| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.16 EUR |
| 10+ | 4 EUR |
| 70+ | 3.62 EUR |
| 560+ | 3.19 EUR |
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Technische Details IXYY8N90C3 IXYS
Description: IGBT 900V 20A TO-252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A, Supplier Device Package: TO-252AA, Td (on/off) @ 25°C: 16ns/40ns, Switching Energy: 460µJ (on), 180µJ (off), Test Condition: 450V, 8A, 30Ohm, 15V, Gate Charge: 13.3 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 48 A, Power - Max: 125 W.
Weitere Produktangebote IXYY8N90C3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXYY8N90C3 | IXYS |
 Description: IGBT 900V 20A TO-252AAPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXYY8N90C3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252 Type of transistor: IGBT Power dissipation: 125W Case: TO252 Mounting: SMD Gate charge: 13.3nC Kind of package: tube Collector-emitter voltage: 900V Technology: GenX3™; Planar; XPT™ Turn-on time: 39ns Turn-off time: 238ns Collector current: 8A Gate-emitter voltage: ±20V Pulsed collector current: 48A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYY8N90C3 |
|
Hersteller: IXYS
Description: IGBT 900V 20A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Description: IGBT 900V 20A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYY8N90C3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH