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Technische Details JAN1N3613 Microchip / Microsemi
Description: DIODE GEN PURP 600V 1A AXIAL, Current - Reverse Leakage @ Vr: 100 µA @ 300 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 1A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Bulk, Qualification: MIL-PRF-19500/228.
Weitere Produktangebote JAN1N3613
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JAN1N3613 | Hersteller : MICROSEMI |
 DO-41/1 A, SILICON, SIGNAL DIODE JAN1N3613Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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JAN1N3613 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 600V 1A AXIAL Current - Reverse Leakage @ Vr: 100 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Military Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: A, Axial Current - Average Rectified (Io): 1A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk Qualification: MIL-PRF-19500/228 |
Produkt ist nicht verfügbar |