auf Bestellung 111 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 10.84 EUR |
| 10+ | 10.82 EUR |
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Technische Details JAN1N3614 Microchip / Microsemi
Description: DIODE GEN PURP 800V 1A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Qualification: MIL-PRF-19500/228.
Weitere Produktangebote JAN1N3614
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN1N3614 | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 800V 1A AXIALPackaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V Qualification: MIL-PRF-19500/228 |
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