JAN1N4153UR-1/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GP 75V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE GP 75V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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Technische Details JAN1N4153UR-1/TR Microchip Technology
Description: DIODE GP 75V 150MA DO213AA, Packaging: Tape & Reel (TR), Package / Case: DO-213AA, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 150mA, Supplier Device Package: DO-213AA, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA, Current - Reverse Leakage @ Vr: 50 nA @ 50 V.