Produkte > MICROCHIP TECHNOLOGY > JAN1N4153UR-1/TR

JAN1N4153UR-1/TR Microchip Technology

Hersteller: Microchip Technology
Description: DIODE GP 75V 150MA DO213AA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Supplier Device Package: DO-213AA
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: -65°C ~ 175°C

Produkt ist nicht verfügbar

Mindestbestellmenge: 100 Stücke

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details JAN1N4153UR-1/TR Microchip Technology

Description: DIODE GP 75V 150MA DO213AA, Current - Reverse Leakage @ Vr: 50 nA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA, Supplier Device Package: DO-213AA, Current - Average Rectified (Io): 150mA, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: DO-213AA, Packaging: Tape & Reel (TR), Voltage - DC Reverse (Vr) (Max): 75 V, Operating Temperature - Junction: -65°C ~ 175°C.