JAN1N5195/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 180V 200MA DO35
Qualification: MIL-PRF-19500/118
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 180 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
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Technische Details JAN1N5195/TR Microchip Technology
Description: DIODE GEN PURP 180V 200MA DO35, Qualification: MIL-PRF-19500/118, Grade: Military, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 180 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-204AH (DO-35), Current - Average Rectified (Io): 200mA, Technology: Standard, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Tape & Reel (TR).
Weitere Produktangebote JAN1N5195/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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JAN1N5195/TR | Hersteller : Microchip / Microsemi |
 Small Signal Switching Diodes 180V 200MA Signal or Computer Diode THT TR |
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