JAN1N5195US/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GP 180V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 180 V
Qualification: MIL-PRF-19500/118
Description: DIODE GP 180V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 180 V
Qualification: MIL-PRF-19500/118
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Technische Details JAN1N5195US/TR Microchip Technology
Description: DIODE GP 180V 200MA DO213AA, Packaging: Tape & Reel (TR), Package / Case: DO-213AA, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-213AA, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 180 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 5 µA @ 180 V, Qualification: MIL-PRF-19500/118.
Weitere Produktangebote JAN1N5195US/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| JAN1N5195US/TR | Hersteller : Microchip / Microsemi |
 Diodes - General Purpose, Power, Switching Signal or Computer Diode |
Produkt ist nicht verfügbar |