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Technische Details JAN1N5417 Microchip / Microsemi
Description: DIODE STANDARD 200V 3A B AXIAL, Qualification: MIL-PRF-19500/411, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: B, Axial, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: B, Axial, Packaging: Bulk.
Weitere Produktangebote JAN1N5417
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JAN1N5417 | Semtech |
-D MET 3A FAST 200V POWER DISCR 1N5417Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
JAN1N5417 | Microchip Technology |
Description: DIODE STANDARD 200V 3A B AXIAL Qualification: MIL-PRF-19500/411 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Military Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: B, Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: B, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN1N5417 | Semtech Corporation |
Description: DIODE STANDARD 200V 4.5A AXIAL Qualification: MIL-PRF-19500/411 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Military Supplier Device Package: Axial Current - Average Rectified (Io): 4.5A Capacitance @ Vr, F: 250pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN1N5417 |
|
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Description: DIODE STANDARD 200V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N5417 |
|
Hersteller: Semtech Corporation
Description: DIODE STANDARD 200V 4.5A AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Supplier Device Package: Axial
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Description: DIODE STANDARD 200V 4.5A AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Supplier Device Package: Axial
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH