| Anzahl | Preis |
|---|---|
| 1+ | 11.3 EUR |
| 10+ | 10.03 EUR |
| 100+ | 9.33 EUR |
| 500+ | 8.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details JAN1N5418 Microchip / Microsemi
Description: DIODE GEN PURP 400V 3A AXIAL, Current - Reverse Leakage @ Vr: 1 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 400 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: B, Axial, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: B, Axial, Packaging: Bulk, Qualification: MIL-PRF-19500/411, Grade: Military.
Weitere Produktangebote JAN1N5418
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JAN1N5418 | MICROSEMI |
B/VOIDLESS HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS 1N5418Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
JAN1N5418 | Microchip Technology |
Description: DIODE GEN PURP 400V 3A AXIAL Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: B, Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: B, Axial Packaging: Bulk Qualification: MIL-PRF-19500/411 Grade: Military |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 132 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN1N5418 | Semtech Corporation |
Description: DIODE GEN PURP 400V 4.5A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 165pF @ 4V, 1MHz Current - Average Rectified (Io): 4.5A Supplier Device Package: Axial Grade: Military Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN1N5418 |
|
Hersteller: MICROSEMI
B/VOIDLESS HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS 1N5418
Anzahl je Verpackung: 1 Stücke
B/VOIDLESS HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS 1N5418
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N5418 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Description: DIODE GEN PURP 400V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Produkt ist nicht verfügbar
Mindestbestellmenge: 132 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N5418 |
|
Hersteller: Semtech Corporation
Description: DIODE GEN PURP 400V 4.5A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 165pF @ 4V, 1MHz
Current - Average Rectified (Io): 4.5A
Supplier Device Package: Axial
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 400V 4.5A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 165pF @ 4V, 1MHz
Current - Average Rectified (Io): 4.5A
Supplier Device Package: Axial
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH