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Technische Details JAN1N5616 Microchip / Microsemi
Description: DIODE GEN PURP 400V 1A AXIAL, Current - Reverse Leakage @ Vr: 500 nA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 400 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Bulk.
Weitere Produktangebote JAN1N5616
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JAN1N5616 | Microchip Technology |
 Description: DIODE GEN PURP 400V 1A AXIALCurrent - Reverse Leakage @ Vr: 500 nA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 200°C Supplier Device Package: A, Axial Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 175 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN1N5616 | Semtech Corporation |
Description: D MET 1A STD 400V Packaging: Bulk Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN1N5616 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Description: DIODE GEN PURP 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 175 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N5616 |
|
Hersteller: Semtech Corporation
Description: D MET 1A STD 400V
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Description: D MET 1A STD 400V
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH