Technische Details JAN1N5804 MICROSEMI
Description: DIODE GEN PURP 100V 2.5A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 10V, 1MHz, Current - Average Rectified (Io): 2.5A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Qualification: MIL-PRF-19500/477.
Weitere Produktangebote JAN1N5804
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| JAN1N5804 | Hersteller : Semtech |
 -D MET 2.5A SFST 100V HR POWER DISCR 1N5804Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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JAN1N5804 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 100V 2.5A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
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| JAN1N5804 | Hersteller : Semtech Corporation |
Description: D MET 2.5A SFST 100V HR Packaging: Bulk |
Produkt ist nicht verfügbar |
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JAN1N5804 | Hersteller : Microchip / Microsemi |
Rectifiers 100V 1A UFR,FRR THT |
Produkt ist nicht verfügbar |