| Anzahl | Preis |
|---|---|
| 1+ | 6.97 EUR |
| 10+ | 6.83 EUR |
| 25+ | 6.67 EUR |
| 100+ | 6.53 EUR |
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Technische Details JAN1N5806 Microchip / Microsemi
Description: DIODE GEN PURP 150V 2.5A AXIAL, Qualification: MIL-PRF-19500/477, Current - Reverse Leakage @ Vr: 1 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A, Voltage - DC Reverse (Vr) (Max): 150 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 2.5A, Capacitance @ Vr, F: 25pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Bulk.
Weitere Produktangebote JAN1N5806
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JAN1N5806 | MICROSEMI |
A/ULTRA FAST RECOVERY GLASS RECTIFIER (LESS THAN 100NS) 1N5806 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
JAN1N5806 | Microchip Technology |
Description: DIODE GEN PURP 150V 2.5A AXIAL Qualification: MIL-PRF-19500/477 Current - Reverse Leakage @ Vr: 1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Military Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: A, Axial Current - Average Rectified (Io): 2.5A Capacitance @ Vr, F: 25pF @ 10V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 159 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN1N5806 | Semtech Corporation |
Description: D MET 6A SFST 50V Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN1N5806 |
Hersteller: MICROSEMI
A/ULTRA FAST RECOVERY GLASS RECTIFIER (LESS THAN 100NS) 1N5806
Anzahl je Verpackung: 1 Stücke
A/ULTRA FAST RECOVERY GLASS RECTIFIER (LESS THAN 100NS) 1N5806
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N5806 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A AXIAL
Qualification: MIL-PRF-19500/477
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Description: DIODE GEN PURP 150V 2.5A AXIAL
Qualification: MIL-PRF-19500/477
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 159 Stücke
Im Einkaufswagen
Stück im Wert von UAH