JAN1N6081 Microchip Technology

Description: DIODE GEN PURP 150V 2A G AXIAL, Packaging: Bulk, Package / Case: G, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: G, Axial, Operating Temperature - Junction: -65°C ~ 155°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A, Current - Reverse Leakage @ Vr: 10 µA @ 150 V, Qualification: MIL-PRF-19500/503.