JAN1N6125US Microchip Technology

Description: TVS DIODE 47.1VWM 89.57V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.61A
Voltage - Reverse Standoff (Typ): 47.1V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 55.96V
Voltage - Clamping (Max) @ Ipp: 89.57V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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Technische Details JAN1N6125US Microchip Technology
Description: TVS DIODE 47.1VWM 89.57V SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 5.61A, Voltage - Reverse Standoff (Typ): 47.1V, Supplier Device Package: B, SQ-MELF, Bidirectional Channels: 1, Voltage - Breakdown (Min): 55.96V, Voltage - Clamping (Max) @ Ipp: 89.57V, Power - Peak Pulse: 500W, Power Line Protection: No, Part Status: Active.
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JAN1N6125US | Hersteller : Microsemi |
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