JAN1N6162US Microchip Technology
Hersteller: Microchip TechnologyDescription: TVS DIODE 51.7VWM 101.96VC MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.63A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 61.37V
Voltage - Clamping (Max) @ Ipp: 101.96V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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Technische Details JAN1N6162US Microchip Technology
Description: TVS DIODE 51.7VWM 101.96VC MELF, Packaging: Bulk, Package / Case: SQ-MELF, C, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 14.63A, Voltage - Reverse Standoff (Typ): 51.7V, Supplier Device Package: C, SQ-MELF, Bidirectional Channels: 1, Voltage - Breakdown (Min): 61.37V, Voltage - Clamping (Max) @ Ipp: 101.96V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500/516.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JAN1N6162US | Hersteller : Microsemi |
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