JAN1N6167A Microchip Technology

Description: TVS DIODE 86.6VWM 151.3V AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 86.6V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Voltage - Clamping (Max) @ Ipp: 151.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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Technische Details JAN1N6167A Microchip Technology
Description: TVS DIODE 86.6VWM 151.3V AXIAL, Packaging: Bulk, Package / Case: G, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 9.9A, Voltage - Reverse Standoff (Typ): 86.6V, Supplier Device Package: C, Axial, Bidirectional Channels: 1, Voltage - Breakdown (Min): 104.5V, Voltage - Clamping (Max) @ Ipp: 151.3V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500/516.
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JAN1N6167A | Hersteller : Microsemi |
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