JAN1N6169 Microchip Technology

Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.98A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 117.33V
Voltage - Clamping (Max) @ Ipp: 187.74V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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Technische Details JAN1N6169 Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC AXIAL, Packaging: Bulk, Package / Case: Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 7.98A, Voltage - Reverse Standoff (Typ): 98.8V, Supplier Device Package: C, Axial, Bidirectional Channels: 1, Voltage - Breakdown (Min): 117.33V, Voltage - Clamping (Max) @ Ipp: 187.74V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500/516.
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JAN1N6169 | Hersteller : Microsemi |
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