
JAN1N6170US Microchip Technology
Hersteller: Microchip Technology
Description: TVS DIODE 114VWM 216.62V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 135.38V
Voltage - Clamping (Max) @ Ipp: 216.62V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 114VWM 216.62V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 135.38V
Voltage - Clamping (Max) @ Ipp: 216.62V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
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Technische Details JAN1N6170US Microchip Technology
Description: TVS DIODE 114VWM 216.62V SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, C, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 6.94A, Voltage - Reverse Standoff (Typ): 114V, Supplier Device Package: C, SQ-MELF, Bidirectional Channels: 1, Voltage - Breakdown (Min): 135.38V, Voltage - Clamping (Max) @ Ipp: 216.62V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500/516.
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JAN1N6170US | Hersteller : Semtech |
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JAN1N6170US | Hersteller : Microchip Technology |
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