
JAN1N6171US Microchip Technology
Hersteller: Microchip Technology
Description: TVS DIODE 26VWM DO214AB SMC
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.56A
Voltage - Reverse Standoff (Typ): 121.6V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144.4V
Voltage - Clamping (Max) @ Ipp: 229.32V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 26VWM DO214AB SMC
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.56A
Voltage - Reverse Standoff (Typ): 121.6V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144.4V
Voltage - Clamping (Max) @ Ipp: 229.32V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
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Technische Details JAN1N6171US Microchip Technology
Description: TVS DIODE 26VWM DO214AB SMC, Packaging: Bulk, Package / Case: SQ-MELF, C, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 6.56A, Voltage - Reverse Standoff (Typ): 121.6V, Supplier Device Package: C, SQ-MELF, Bidirectional Channels: 1, Voltage - Breakdown (Min): 144.4V, Voltage - Clamping (Max) @ Ipp: 229.32V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500/516.
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JAN1N6171US | Hersteller : Microsemi |
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JAN1N6171US | Hersteller : Microchip / Microsemi |
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