JAN1N6461US Microchip / Microsemi
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.33 EUR |
| 10+ | 21.05 EUR |
| 25+ | 20.93 EUR |
| 100+ | 20.91 EUR |
| 500+ | 20.89 EUR |
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Technische Details JAN1N6461US Microchip / Microsemi
Description: TVS DIODE 5VWM 9VC B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 315A (8/20µs), Voltage - Reverse Standoff (Typ): 5V, Supplier Device Package: B, SQ-MELF, Unidirectional Channels: 1, Voltage - Breakdown (Min): 5.6V, Voltage - Clamping (Max) @ Ipp: 9V, Power - Peak Pulse: 500W, Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500/551.
Weitere Produktangebote JAN1N6461US
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN1N6461US | Hersteller : Microchip Technology |
 Description: TVS DIODE 5VWM 9VC B SQ-MELFPackaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 315A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: B, SQ-MELF Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 9V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/551 |
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