JAN1N6621US/TR Microchip Technology

Description: DIODE GEN PURP 75V 200MA D-5A, Qualification: MIL-PRF-19500/116, Current - Reverse Leakage @ Vr: 500 nA @ 75 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 75 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: D-5A, Current - Average Rectified (Io): 200mA, Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 20 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SQ-MELF, A, Packaging: Tape & Reel (TR).