JAN1N6625 Microchip Technology

Description: DIODE GEN PURP 1KV 1A AXIAL, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Bulk, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Qualification: MIL-PRF-19500/585.