JAN2N1711 Microchip / Microsemi
auf Bestellung 100 Stücke:
Lieferzeit 164-168 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 95.36 EUR |
| 10+ | 95.27 EUR |
| 25+ | 90.80 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details JAN2N1711 Microchip / Microsemi
Description: TRANS NPN 30V 0.5A TO-5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-5, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 800 mW, Grade: Military, Qualification: MIL-PRF-19500/225.
Weitere Produktangebote JAN2N1711
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JAN2N1711 | Hersteller : MOTOROLA |
auf Bestellung 51000 Stücke: Lieferzeit 21-28 Tag (e) |
|||
| JAN2N1711 | Hersteller : Microchip Technology |
Description: TRANS NPN 30V 0.5A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/225 |
Produkt ist nicht verfügbar |