JAN2N2218 Microchip / Microsemi
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.42 EUR |
| 100+ | 5.03 EUR |
| 500+ | 5.02 EUR |
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Technische Details JAN2N2218 Microchip / Microsemi
Description: TRANS NPN 30V 0.8A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: TO-39 (TO-205AD), Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 800 mW, Grade: Military, Qualification: MIL-PRF-19500/251.
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| JAN2N2218 | Hersteller : MOTOROLA |
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auf Bestellung 75500 Stücke: Lieferzeit 21-28 Tag (e) |
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JAN2N2218 | Hersteller : Microchip Technology |
Description: TRANS NPN 30V 0.8A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/251 |
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