JAN2N2222AUB Microchip / Microsemi
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 40V 800mA 500mW 3 Pin CER Small-Signal BJT
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.08 EUR |
| 100+ | 9.34 EUR |
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Technische Details JAN2N2222AUB Microchip / Microsemi
Description: TRANS NPN 50V 0.8A UB, Packaging: Bulk, Package / Case: 3-SMD, Non-Standard, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UB, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/255.
Weitere Produktangebote JAN2N2222AUB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| JAN2N2222AUB | MICROSEMI |
UB/NPN SILICON SWITCHING TRANSISTOR 2N2222 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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JAN2N2222AUB | Microchip Technology |
Description: TRANS NPN 50V 0.8A UB Packaging: Bulk Package / Case: 3-SMD, Non-Standard Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN2N2222AUB | MICROCHIP TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 800mA; 500mW Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.8A Power dissipation: 0.5W Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 63 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N2222AUB |
|
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N2222AUB |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 800mA; 500mW
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.8A
Power dissipation: 0.5W
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 800mA; 500mW
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.8A
Power dissipation: 0.5W
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 63 Stücke
Im Einkaufswagen
Stück im Wert von UAH