JAN2N2222AUB Microchip / Microsemi
Hersteller: Microchip / MicrosemiBipolar Transistors - BJT 40V 800mA 500mW 3 Pin CER Small-Signal BJT
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.47 EUR |
| 100+ | 7.85 EUR |
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Technische Details JAN2N2222AUB Microchip / Microsemi
Description: TRANS NPN 50V 0.8A UB, Packaging: Bulk, Package / Case: 3-SMD, Non-Standard, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UB, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/255.
Weitere Produktangebote JAN2N2222AUB
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Verfügbarkeit |
Preis |
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JAN2N2222AUB | Hersteller : Semicoa |
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| JAN2N2222AUB | Hersteller : MICROSEMI |
UB/NPN SILICON SWITCHING TRANSISTOR 2N2222 Anzahl je Verpackung: 1 Stücke |
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JAN2N2222AUB | Hersteller : Microchip Technology |
Description: TRANS NPN 50V 0.8A UB Packaging: Bulk Package / Case: 3-SMD, Non-Standard Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |