Technische Details JAN2N2604 MOTOROLA
Description: TRANS PNP 60V 0.03A TO46, Qualification: MIL-PRF-19500/354, Power - Max: 400 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 30 mA, Grade: Military, Supplier Device Package: TO-46 (TO-206AB), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V, Current - Collector Cutoff (Max): 10nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-206AB, TO-46-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote JAN2N2604
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JAN2N2604 | Microchip Technology |
 Description: TRANS PNP 60V 0.03A TO46Qualification: MIL-PRF-19500/354 Power - Max: 400 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 30 mA Grade: Military Supplier Device Package: TO-46 (TO-206AB) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V Current - Collector Cutoff (Max): 10nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| JAN2N2604 | Microchip / Microsemi |
Bipolar Transistors - BJT 80V 30mA 400mW Small-Signal BJT THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| JAN2N2604 | Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN2N2604 |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.03A TO46
Qualification: MIL-PRF-19500/354
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 30 mA
Grade: Military
Supplier Device Package: TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Description: TRANS PNP 60V 0.03A TO46
Qualification: MIL-PRF-19500/354
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 30 mA
Grade: Military
Supplier Device Package: TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N2604 |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 80V 30mA 400mW Small-Signal BJT THT
Bipolar Transistors - BJT 80V 30mA 400mW Small-Signal BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N2604 |
|
Hersteller: Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH