JAN2N2906A
Hersteller:
auf Bestellung 110 Stücke:
Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details JAN2N2906A
Description: TRANS PNP 60V 0.6A TO-18, Grade: Military, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 600 mA, Part Status: Active, Supplier Device Package: TO-18, Current - Collector Cutoff (Max): 50nA, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Bulk, Qualification: MIL-PRF-19500/291, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V.
Weitere Produktangebote JAN2N2906A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JAN2N2906A | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO-18 Grade: Military Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 600 mA Part Status: Active Supplier Device Package: TO-18 Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Qualification: MIL-PRF-19500/291 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 193 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
JAN2N2906A | Microchip / Microsemi |
Bipolar Transistors - BJT 40V 600mA 400mW PNP Small-Signal BJT THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN2N2906A |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-18
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-18
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/291
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Description: TRANS PNP 60V 0.6A TO-18
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-18
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/291
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 193 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N2906A |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 40V 600mA 400mW PNP Small-Signal BJT THT
Bipolar Transistors - BJT 40V 600mA 400mW PNP Small-Signal BJT THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH