Jan2N2920L

Jan2N2920L Microchip Technology



Hersteller: Microchip Technology
Description: TRANS 2NPN 60V 0.03A TO78
Qualification: MIL-PRF-19500/355
Grade: Military
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30mA
Power - Max: 350mW
Operating Temperature: 200°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
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Technische Details Jan2N2920L Microchip Technology

Description: TRANS 2NPN 60V 0.03A TO78, Qualification: MIL-PRF-19500/355, Grade: Military, Supplier Device Package: TO-78-6, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Voltage - Collector Emitter Breakdown (Max): 60V, Current - Collector (Ic) (Max): 30mA, Power - Max: 350mW, Operating Temperature: 200°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Through Hole, Package / Case: TO-78-6 Metal Can, Packaging: Bulk.

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Jan2N2920L Hersteller : Microchip / Microsemi microchiptechnology_mscos10183_1-1991107.pdf Bipolar Transistors - BJT BJTs
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