Technische Details JAN2N3019 MOTOROLA
Description: TRANS NPN 80V 1A TO-39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Supplier Device Package: TO-39, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 800 mW, Grade: Military, Qualification: MIL-PRF-19500/391.
Weitere Produktangebote JAN2N3019
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JAN2N3019 | Hersteller : Microchip Technology |
 Description: TRANS NPN 80V 1A TO-39Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: TO-39 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/391 |
Produkt ist nicht verfügbar |
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JAN2N3019 | Hersteller : Microchip / Microsemi |
Bipolar Transistors - BJT 80V 1A 800mW Small-Signal BJT THT |
Produkt ist nicht verfügbar |