JAN2N3439 Microchip / Microsemi
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.26 EUR |
| 25+ | 19.92 EUR |
| 100+ | 19.27 EUR |
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Technische Details JAN2N3439 Microchip / Microsemi
Description: TRANS NPN 350V 1A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 2µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Supplier Device Package: TO-39 (TO-205AD), Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 800 mW, Grade: Military, Qualification: MIL-PRF-19500/368.
Weitere Produktangebote JAN2N3439
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| JAN2N3439 | Hersteller : MOT |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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JAN2N3439 | Hersteller : Microchip Technology |
Description: TRANS NPN 350V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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