JAN2N3439L Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Produktrezensionen
Produktbewertung abgeben
Technische Details JAN2N3439L Microchip Technology
Description: TRANS NPN 350V 1A TO-5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 2µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Supplier Device Package: TO-5, Grade: Military, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/368.
Weitere Produktangebote JAN2N3439L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
JAN2N3439L | Microchip / Microsemi |
Bipolar Transistors - BJT 350V 1A 800mW Long-Lead Power BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN2N3439L | MICROCHIP TECHNOLOGY |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 350V; 1A; 800mW Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 1A Mounting: THT Power dissipation: 0.8W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 23 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N3439L |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 350V 1A 800mW Long-Lead Power BJT
Bipolar Transistors - BJT 350V 1A 800mW Long-Lead Power BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N3439L |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 1A; 800mW
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Mounting: THT
Power dissipation: 0.8W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 1A; 800mW
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Mounting: THT
Power dissipation: 0.8W
Produkt ist nicht verfügbar
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen
Stück im Wert von UAH