Technische Details JAN2N3501L MOTOROLA
Description: TRANS NPN 150V 0.3A TO-5, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 150 V, Current - Collector (Ic) (Max): 300 mA, Supplier Device Package: TO-5, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk, Qualification: MIL-PRF-19500/366, Grade: Military.
Weitere Produktangebote JAN2N3501L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JAN2N3501L | Microchip Technology |
 Description: TRANS NPN 150V 0.3A TO-5Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 300 mA Supplier Device Package: TO-5 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk Qualification: MIL-PRF-19500/366 Grade: Military |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N3501L | Microchip Technology |
Bipolar Transistors - BJT BJTs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 103 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N3501L |
|
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/366
Grade: Military
Description: TRANS NPN 150V 0.3A TO-5
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/366
Grade: Military
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N3501L |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT BJTs
Bipolar Transistors - BJT BJTs
Produkt ist nicht verfügbar
Mindestbestellmenge: 103 Stücke
Im Einkaufswagen
Stück im Wert von UAH