Technische Details JAN2N3700UB MICROSEMI
Description: TRANS NPN 80V 1A UB, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: UB, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Current - Collector Cutoff (Max): 10nA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Bulk, Qualification: MIL-PRF-19500/391, Grade: Military.
Weitere Produktangebote JAN2N3700UB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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JAN2N3700UB | Microchip Technology |
 Description: TRANS NPN 80V 1A UBPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Current - Collector Cutoff (Max): 10nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Bulk Qualification: MIL-PRF-19500/391 Grade: Military |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N3700UB |
|
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/391
Grade: Military
Description: TRANS NPN 80V 1A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/391
Grade: Military
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH