Technische Details JAN2N3716 MOTOROLA
Description: TRANS NPN 80V 10A TO3, Packaging: Bulk, Package / Case: TO-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V, Supplier Device Package: TO-3 (TO-204AA), Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 5 W, Qualification: MIL-PRF-19500/408.
Weitere Produktangebote JAN2N3716
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| JAN2N3716 | Hersteller : Microchip Technology |
 Description: TRANS NPN 80V 10A TO3Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 5 W Qualification: MIL-PRF-19500/408 |
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| JAN2N3716 | Hersteller : Microchip / Microsemi |
Bipolar Transistors - BJT 80V 10A 5W NPN Power BJT THT |
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