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JAN2N3739


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Technische Details JAN2N3739

Description: NPN TRANSISTOR, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 25mA, 250mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 250mA, 10V, Supplier Device Package: TO-66 (TO-213AA), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 20 W.

Weitere Produktangebote JAN2N3739

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JAN2N3739 JAN2N3739 Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 25mA, 250mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 250mA, 10V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JAN2N3739
JAN2N3739
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 25mA, 250mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 250mA, 10V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH