JAN2N3741
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auf Bestellung 382 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details JAN2N3741
Description: TRANS PNP 80V 4A TO66, Power - Max: 25 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 4 A, Part Status: Active, Supplier Device Package: TO-66 (TO-213AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V, Current - Collector Cutoff (Max): 10µA, Qualification: MIL-PRF-19500/441, Grade: Military, Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-213AA, TO-66-2, Packaging: Bulk.
Weitere Produktangebote JAN2N3741
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JAN2N3741 | Microchip Technology |
Description: TRANS PNP 80V 4A TO66 Power - Max: 25 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 4 A Part Status: Active Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Current - Collector Cutoff (Max): 10µA Qualification: MIL-PRF-19500/441 Grade: Military Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| JAN2N3741 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N3741 |
|
Hersteller: Microchip Technology
Description: TRANS PNP 80V 4A TO66
Power - Max: 25 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Current - Collector Cutoff (Max): 10µA
Qualification: MIL-PRF-19500/441
Grade: Military
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Description: TRANS PNP 80V 4A TO66
Power - Max: 25 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Current - Collector Cutoff (Max): 10µA
Qualification: MIL-PRF-19500/441
Grade: Military
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N3741 |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT
Bipolar Transistors - BJT Power BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH