Technische Details JAN2N3996 MOTOROLA
Description: TRANS NPN 80V 10A TO111, Qualification: MIL-PRF-19500/374, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 10 A, Grade: Military, Supplier Device Package: TO-111, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Stud Mount, Package / Case: TO-111-4, Stud, Packaging: Bulk.
Weitere Produktangebote JAN2N3996
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JAN2N3996 | Microchip Technology |
 Description: TRANS NPN 80V 10A TO111Qualification: MIL-PRF-19500/374 Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 10 A Grade: Military Supplier Device Package: TO-111 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| JAN2N3996 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N3996 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 80V 10A TO111
Qualification: MIL-PRF-19500/374
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Grade: Military
Supplier Device Package: TO-111
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Description: TRANS NPN 80V 10A TO111
Qualification: MIL-PRF-19500/374
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Grade: Military
Supplier Device Package: TO-111
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N3996 |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT
Bipolar Transistors - BJT Power BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH