JAN2N4033UA/TR Microchip Technology
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/512
Grade: Military
Power - Max: 500 mW
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Technische Details JAN2N4033UA/TR Microchip Technology
Description: SMALL-SIGNAL BJT, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: UA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Current - Collector Cutoff (Max): 25nA, Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 4-SMD, No Lead, Packaging: Tape & Reel (TR), Qualification: MIL-PRF-19500/512, Grade: Military, Power - Max: 500 mW.
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| JAN2N4033UA/TR | Microchip / Microsemi |
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Bipolar Transistors - BJT 80 V Small-Signal BJT
Bipolar Transistors - BJT 80 V Small-Signal BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH