Technische Details JAN2N4449 MOTOROLA
Description: TRANS NPN 20V TO46, Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Qualification: MIL-PRF-19500/317, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Grade: Military, Supplier Device Package: TO-46 (TO-206AB), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V, Current - Collector Cutoff (Max): 400nA, Mounting Type: Through Hole, Package / Case: TO-206AB, TO-46-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote JAN2N4449
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| JAN2N4449 | Microchip Technology |
 Description: TRANS NPN 20V TO46Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Qualification: MIL-PRF-19500/317 Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 20 V Grade: Military Supplier Device Package: TO-46 (TO-206AB) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Current - Collector Cutoff (Max): 400nA Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| JAN2N4449 | Microchip / Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N4449 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 20V TO46
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Qualification: MIL-PRF-19500/317
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Grade: Military
Supplier Device Package: TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Current - Collector Cutoff (Max): 400nA
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 20V TO46
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Qualification: MIL-PRF-19500/317
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Grade: Military
Supplier Device Package: TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Current - Collector Cutoff (Max): 400nA
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N4449 |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH