Technische Details JAN2N4449 MOTOROLA
Description: TRANS NPN 20V TO46, Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Qualification: MIL-PRF-19500/317, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Grade: Military, Supplier Device Package: TO-46 (TO-206AB), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V, Current - Collector Cutoff (Max): 400nA, Mounting Type: Through Hole, Package / Case: TO-206AB, TO-46-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote JAN2N4449
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| JAN2N4449 | Hersteller : Microchip Technology |
 Description: TRANS NPN 20V TO46Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Qualification: MIL-PRF-19500/317 Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 20 V Grade: Military Supplier Device Package: TO-46 (TO-206AB) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Current - Collector Cutoff (Max): 400nA Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
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| JAN2N4449 | Hersteller : Microchip / Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |