Technische Details JAN2N4854 MOTOROLA
Description: NPN TRANSISTOR, Part Status: Active, Supplier Device Package: TO-78-6, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Voltage - Collector Emitter Breakdown (Max): 40V, Current - Collector (Ic) (Max): 600mA, Power - Max: 600mW, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, PNP, Mounting Type: Through Hole, Package / Case: TO-78-6 Metal Can, Packaging: Bulk.
Weitere Produktangebote JAN2N4854
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JAN2N4854 | Microchip Technology |
Description: NPN TRANSISTOR Part Status: Active Supplier Device Package: TO-78-6 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 600mA Power - Max: 600mW Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN, PNP Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N4854 | Microchip / Microsemi |
 Bipolar Transistors - BJT BJTs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N4854 |
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Part Status: Active
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 600mA
Power - Max: 600mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN, PNP
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Description: NPN TRANSISTOR
Part Status: Active
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 600mA
Power - Max: 600mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN, PNP
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N4854 |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT BJTs
Bipolar Transistors - BJT BJTs
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH