JAN2N5339U3 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 100V 100UA U-3
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: U-3 (TO-276AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 µA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 100UA U-3
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: U-3 (TO-276AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 µA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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Technische Details JAN2N5339U3 Microchip Technology
Description: TRANS NPN 100V 100UA U-3, Packaging: Bulk, Package / Case: TO-276AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V, Supplier Device Package: U-3 (TO-276AA), Part Status: Active, Current - Collector (Ic) (Max): 100 µA, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1 W.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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JAN2N5339U3 | Hersteller : Microchip / Microsemi |
 Bipolar Transistors - BJT Power BJT |
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